Laser-Microstructured ZnO/p-Si Photodetector with Enhanced and Broadband Responsivity across the Ultraviolet–Visible–Near-Infrared Range

@article{Chatzigiannakis2020LaserMicrostructuredZP,
  title={Laser-Microstructured ZnO/p-Si Photodetector with Enhanced and Broadband Responsivity across the Ultraviolet–Visible–Near-Infrared Range},
  author={Georgios Chatzigiannakis and Angelina Jaros and Renaud Leturcq and J{\"o}rgen Jungclaus and Tobias Voss and Spyros Gardelis and Maria Kandyla},
  journal={arXiv: Applied Physics},
  year={2020}
}
We develop ZnO/p-Si photodetectors by atomic layer deposition (ALD) of ZnO thin films on laser-microstructured silicon and we investigate their electrical and optical behavior, demonstrating high sensitivity and broadband operation. Microstructured p-type silicon was obtained by ns-laser irradiation in SF6 gas, which results in the formation of quasi-ordered and uniform microspikes on the silicon surface. The irradiated silicon contains sulfur impurities, which extend its absorbance to the near… 

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References

SHOWING 1-10 OF 76 REFERENCES
Characterization of films and interfaces in n-ZnO/p-Si photodiodes
A Photodetector Based on p-Si/n-ZnO Nanotube Heterojunctions with High Ultraviolet Responsivity.
Enhanced ultraviolet (UV) photodetectors (PDs) with high responsivity comparable to that of visible and infrared photodetectors are needed for commercial applications. n-Type ZnO nanotubes (NTs) with
Scalable fabrication of nanostructured p-Si/n-ZnO heterojunctions by femtosecond-laser processing
We present a versatile, large-scale fabrication method for nanostructured semiconducting junctions. Silicon substrates were processed by femtosecond laser pulses in methanol and a quasi-ordered
Deep ultraviolet and near infrared photodiode based on n-ZnO/p-silicon nanowire heterojunction fabricated at low temperature
n-ZnO/p-silicon nanowire (SiNW) photodiodes were prepared by radio frequency reactive magnetron sputtering of n-type zinc oxide at room temperature on photoresist filled p-SiNWs, which were
Ultraviolet-enhanced photodiode employing n-ZnO/p-Si structure
We report on the photoelectric properties of n-ZnO/p-Si photodiodes which detect UV photons in the depleted n-ZnO and simultaneously detect visible photons in the depleted p-Si. As characterized by
Polarity-controlled ultraviolet/visible light ZnO nanorods/p-Si photodetector
Vertically aligned ZnO nanorods of high quality were grown on p-type silicon substrate by a modified chemical vapor phase process. Low temperature photoluminescence measurements show a near band gap
Study on the luminescence properties of n-ZnO/p-Si hetero-junction diode grown by MOCVD
n-ZnO/p-Si hetero-junction light emitting diodes were fabricated using a metal organic chemical vapour deposition (MOCVD) technique. Room temperature (RT) photoluminescence (PL) spectrum showed an
Ultraviolet electroluminescence from ZnO/p-Si heterojunctions
Nominally undoped ZnO films were deposited by reactive sputtering on the lightly boron-doped (p−) and heavily boron-doped (p+) silicon substrates. The sputtered ZnO films were identified to be highly
Spectral responsivity and quantum efficiency of n-ZnO/p-Si photodiode fully isolated by ion-beam treatment
We report on the fabrication of a heterojunction photodiode for the visible range that consists of a transparent insulating ZnO overlayer and a transparent semiconducting n-ZnO layer on p-Si. For
...
1
2
3
4
5
...