Laser‐induced plasmas for primary ion deposition of epitaxial Ge and Si films

@inproceedings{Lubben1985LaserinducedPF,
  title={Laser‐induced plasmas for primary ion deposition of epitaxial Ge and Si films},
  author={Daniel C. Lubben and Scott A. Barnett and Kunihiro Suzuki and S. M. Gorbatkin and Joseph E. Greene},
  year={1985}
}
  • Daniel C. Lubben, Scott A. Barnett, +2 authors Joseph E. Greene
  • Published 1985
  • Chemistry
  • Epitaxial Ge and Si films have been grown by primary ion deposition from laser‐induced plasmas. The plasmas were formed by focusing 15 ns, 107–108 W cm−2, pulses of 5 eV photons from a KrF excimer laser onto Ge or Si single crystal wafer targets. Time‐of‐flight, current‐voltage, and film‐thickness distribution measurements established that neutral atoms and ions were emitted from Ge targets with mean velocities of 1.0–1.6×106 cm s−1 (corresponding to average kinetic energies of 40 to 100 eV) in… CONTINUE READING

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