Large suspended inductors on silicon and their use in a 2- mu m CMOS RF amplifier

  title={Large suspended inductors on silicon and their use in a 2- mu m CMOS RF amplifier},
  author={J.Y.-C. Chang and Asad A. Abidi and Michael Gaitan},
  journal={IEEE Electron Device Letters},
Large spiral inductors encased in oxide over silicon are shown to operate beyond the UHF band when the capacitance and loss resistance are greatly reduced by selective removal of the underlying substrate. Using a 100-nH inductor whose self-resonance lies at 3 GHz, a balanced tuned amplifier with a gain of 14 dB centered at 770 MHz has been implemented in a standard digital 2- mu m CMOS IC process. The core amplifier noise figure is 6 dB, and the power dissipation is 7 mW for a 3-V supply.<<ETX… 

Figures from this paper

An inductorless 900 MHz RF low-noise amplifier in 0.9 /spl mu/m CMOS
  • Y. Shin, K. Bult
  • Physics, Engineering
    Proceedings of CICC 97 - Custom Integrated Circuits Conference
  • 1997
A low cost 900-MHz RF Low-Noise Amplifier is implemented in a standard 0.9 /spl mu/m digital CMOS process. The design circumvents the use of both expensive external inductors as well as large on-chip
CMOS front end RF amplifier with on-chip tuning
In this paper we present a CMOS front-end amplifier with on chip tuning circuitry. The design is targeted towards applications in wireless RF communications. In the design, integrated inductors are
A 1.8-GHz low-phase-noise CMOS VCO using optimized hollow spiral inductors
A completely integrated 1.8-GHz low-phase-noise voltage-controlled oscillator (VCO) has been realized in a standard silicon digital CMOS process. The design relies heavily on the integrated spiral
A 3-V RF CMOS bandpass amplifier using an active inductor
  • A. Thanachayanont, A. Payne
  • Physics
    ISCAS '98. Proceedings of the 1998 IEEE International Symposium on Circuits and Systems (Cat. No.98CH36187)
  • 1998
This paper presents the design of a 3-V RF CMOS bandpass amplifier using the recently proposed CMOS active inductor. Negative feedback is used with a cascode amplifier to realise a grounded
Monolithic transformers and their application in a differential CMOS RF low-noise amplifier
A 900 MHz low-noise amplifier (LNA) utilizing three monolithic transformers to implement on-chip tuning networks and requiring no external components has been integrated in 2.88 mm/sup 2/ in a
High-performance fully integrated 4 GHz CMOS LC VCO in standard 0.18-/spl mu/m CMOS technology
In this paper, we demonstrate that high Q-factor inductors on normal 750-/spl mu/m-thick silicon substrate (in standard 0.18-/spl mu/m CMOS technology) can be achieved by optimization of the layout
Silicon RF devices fabricated by ULSI processes featuring 0.1-/spl mu/m SOI-CMOS and suspended inductors
High-performance RF devices were fabricated using standard Si ULSI processes. Suspended inductors and 0.1-/spl mu/m CMOS devices were integrated on an SOI wafer having a cavity beneath the devices. A
BroadbandQ Si-based hybrid inductor for RF applications
This letter presents a silicon inductor with a constant quality factor Q from 900 MHz to 2.5 GHz using a conventional CMOS double-metal interconnection technology. For the first time, the linearity
A 1.6-GHz Current-Controlled Oscillator with Integrated Inductor
A 1.6 GHz fully monolithic silicon bipolar LC current-controlledoscillator (CCO) circuit implemented in a 0.8 µmBiCMOS technology and characterized for use in wireless applicationsis presented. The
Experimental results and die area efficient self-shielded on-chip vertical solenoid inductors for multi-GHz CMOS RFIC
  • Hau-Yiu Tsui, J. Lau
  • Engineering, Physics
    IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003
  • 2003
On-chip circular vertical solenoid inductors have been designed and fabricated using standard 6-metal layer CMOS process. Compared to the 4.1 nH circular planar spiral inductor on the same chip, the


Design and performance of low-current GaAs MMICs for L-band front-end applications
GaAs monolithic microwave integrated circuits (MMICs) with very low current and of very small size have been developed for L-band front-end applications. The MMICs fully employ lumped LC elements
Si IC-compatible inductors and LC passive filters
Passive inductors and LC filters fabricated in standard Si IC technology are demonstrated. Q-factors from three to eight and inductors up to 10 nH in the gigahertz range have been realized.
Hybrid Integrated Lumped-Element Microwave Amplifiers
This paper describes the development of microwave lumped-element thin-film amplifiers.The basic design philosophy underlying lumped inductors and capacitors at microwave frequencies is reviewed,
Hybrid integrated lumped-element microwave amplifiers
This paper describes the development of microwave lumped-element thin-film amplifiers. The basic design philosophy underlying lumped inductors and capacitors at microwave frequencies is reviewed,
The effect of air bridge height on the propagation characteristics of microstrip
The air bridge is often used for lowering the effective capacitance per unit length and fabricating crossovers in monolithic microwave integrated circuits (MMICs). The static and dynamic propagation
Design of Planar Rectangular Microelectronic Inductors
Negative mutual inductance results from coupling between two conductors having current vectors in opposite directions. As a quantity in electronic circuits, negative mutual inductance is usually so