Large-scale pattern growth of graphene films for stretchable transparent electrodes

@article{Kim2009LargescalePG,
  title={Large-scale pattern growth of graphene films for stretchable transparent electrodes},
  author={Keun Soo Kim and Yue Zhao and Houk Jang and Sang Yoon Lee and Jong Min Kim and Kwang S. Kim and Jong-Hyun Ahn and Philip Kim and Jae-Young Choi and Byung Hee Hong},
  journal={Nature},
  year={2009},
  volume={457},
  pages={706-710}
}
Problems associated with large-scale pattern growth of graphene constitute one of the main obstacles to using this material in device applications. Recently, macroscopic-scale graphene films were prepared by two-dimensional assembly of graphene sheets chemically derived from graphite crystals and graphene oxides. However, the sheet resistance of these films was found to be much larger than theoretically expected values. Here we report the direct synthesis of large-scale graphene films using… 

Graphene film growth on polycrystalline metals.

Current progress in the formation and control of graphene films on polycrystalline metal surfaces is described, which has the potential to rival indium tin oxide (ITO) and become a material for producing next generation displays, solar cells, and sensors.

Control of thickness uniformity and grain size in graphene films for transparent conductive electrodes

A two-step ambient pressure CVD process to synthesize continuous single-layer graphene films with large grain size to provide important guidance toward the synthesis of high quality uniform graphene films, and could offer a great driving force for graphene based applications.

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

It is shown that graphene grows in a self-limiting way on copper films as large-area sheets (one square centimeter) from methane through a chemical vapor deposition process, and graphene film transfer processes to arbitrary substrates showed electron mobilities as high as 4050 square centimeters per volt per second at room temperature.

Ultrafast Growth of Uniform Multi-Layer Graphene Films Directly on Silicon Dioxide Substrates

This work presents an ultrafast method for direct growth of uniform graphene on a silicon dioxide (SiO2/Si) substrate using methanol as the only carbon source and shows a record growth rate of ~33.6 µm/s.

Chemical vapor deposition of graphene single crystals.

Recently developed methods of making graphene grains with special spatial structures, including snowflakes, six-lobed flowers, pyramids and hexagonal graphene onion rings are discussed, highlighting the fundamental growth mechanism and practical applications of these well-shaped graphene structures.

Chemical vapour deposition growth of large single crystals of monolayer and bilayer graphene.

A new pathway is reported to greatly reduce the graphene nucleation density from ~10(6) to 4 nuclei cm(-2), enabling the growth of giant single crystals of monolayer graphene with a lateral size up to 5 mm and Bernal-stacked bilayers graphene with the lateral sizes up to 300 μm, both the largest reported to date.

Roll-to-roll production of 30-inch graphene films for transparent electrodes.

The roll-to-roll production and wet-chemical doping of predominantly monolayer 30-inch graphene films grown by chemical vapour deposition onto flexible copper substrates are reported, showing high quality and sheet resistances superior to commercial transparent electrodes such as indium tin oxides.

Rapid fabrication of graphene on dielectric substrates via solid-phase processes

To unleash the full potential of graphene in functional devices, high-quality graphene sheets and patterns are frequently required to be deposited on dielectric substrates. However, it generally
...

References

SHOWING 1-10 OF 33 REFERENCES

Highly conducting graphene sheets and Langmuir-Blodgett films.

It is reported that the exfoliation-reintercalation-expansion of graphite can produce high-quality single-layer graphene sheets stably suspended in organic solvents that exhibit high electrical conductance at room and cryogenic temperatures.

Epitaxial graphene on ruthenium.

It is shown that epitaxy on Ru(0001) produces arrays of macroscopic single-crystalline graphene domains in a controlled, layer-by-layer fashion, and demonstrates a route towards rational graphene synthesis on transition-metal templates for applications in electronics, sensing or catalysis.

Large area, few-layer graphene films on arbitrary substrates by chemical vapor deposition.

The transparency, conductivity, and ambipolar transfer characteristics of the films suggest their potential as another materials candidate for electronics and opto-electronic applications.

Graphene-based composite materials

The bottom-up chemical approach of tuning the graphene sheet properties provides a path to a broad new class of graphene-based materials and their use in a variety of applications.

Graphene segregated on Ni surfaces and transferred to insulators

We report an approach to synthesize high quality graphene by surface segregation and substrate transfer. Graphene was segregated from Ni surface under the ambient pressure by dissolving carbon in Ni

Preparation and characterization of graphene oxide paper

Graphene oxide paper is reported, a free-standing carbon-based membrane material made by flow-directed assembly of individual graphene oxide sheets that outperforms many other paper-like materials in stiffness and strength.

Electronic Confinement and Coherence in Patterned Epitaxial Graphene

The transport properties, which are closely related to those of carbon nanotubes, are dominated by the single epitaxial graphene layer at the silicon carbide interface and reveal the Dirac nature of the charge carriers.

The rise of graphene.

Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed-matter physics, where quantum relativistic phenomena can now be mimicked and tested in table-top experiments.

Controlled buckling of semiconductor nanoribbons for stretchable electronics

It is shown that precisely engineered buckling geometries can be created in nanoribbons of GaAs and Si in this manner and that these configurations can be described quantitatively with analytical models of the mechanics.