Large scale metal-free synthesis of graphene on sapphire and transfer-free device fabrication.

@article{Song2012LargeSM,
  title={Large scale metal-free synthesis of graphene on sapphire and transfer-free device fabrication.},
  author={H. Song and Minhyeok Son and Chibeom Park and Hyunseob Lim and M. Levendorf and A. W. Tsen and Jiwoong Park and H. Choi},
  journal={Nanoscale},
  year={2012},
  volume={4 10},
  pages={
          3050-4
        }
}
Metal catalyst-free growth of large scale single layer graphene film on a sapphire substrate by a chemical vapor deposition (CVD) process at 950 °C is demonstrated. A top-gated graphene field effect transistor (FET) device is successfully fabricated without any transfer process. The detailed growth process is investigated by the atomic force microscopy (AFM) studies. 
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