Large enhancement in hole velocity and mobility in p-type [110] and [111] silicon nanowires by cross section scaling: an atomistic analysis.

@article{Neophytou2010LargeEI,
  title={Large enhancement in hole velocity and mobility in p-type [110] and [111] silicon nanowires by cross section scaling: an atomistic analysis.},
  author={N. Neophytou and Hans Kosina},
  journal={Nano letters},
  year={2010},
  volume={10 12},
  pages={4913-9}
}
The mobility of p-type nanowires (NWs) with diameters of D = 12 nm down to D = 3 nm in [100], [110], and [111] transport orientations is calculated. An atomistic tight-binding model is used to calculate the NW electronic structure. Linearized Boltzmann transport theory is applied, including phonon and surface roughness scattering (SRS) mechanisms, for the mobility calculation. We find that large mobility enhancements (of the order of 4×) can be achieved as the diameter of the [110] and even… CONTINUE READING

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