Large-area epitaxial growth of MoSe2 via an incandescent molybdenum source.

Abstract

We have developed an incandescent Mo source to fabricate large-area single-crystalline MoSe2 thin films. The as-grown MoSe2 thin films were characterized using transmission electron microscopy, energy dispersive x-ray spectroscopy, atomic force microscopy, Raman spectroscopy, photoluminescence (PL), reflection high energy electron diffraction (RHEED) and angular resolved photoemission spectroscopy (ARPES). A new Raman characteristic peak at 1591 cm-1 was identified. Results from Raman spectroscopy, PL, RHEED and ARPES studies consistently reveal that large-area single crystalline mono-layer of MoSe2 could be achieved by this technique. This technique enjoys several advantages over conventional approaches and could be extended to the growth of other two-dimensional layered materials containing a low-vapor-pressure element.

DOI: 10.1088/1361-6528/aa8b81

Cite this paper

@article{Cheng2017LargeareaEG, title={Large-area epitaxial growth of MoSe2 via an incandescent molybdenum source.}, author={Man Kit Cheng and Jing Liang and Ying Hoi Lai and Liang Pang and Yi Liu and Jun Shen and Jian Qiang Hou and Qing Lin He and Bo Chao Xu and Jun Chen and Gan Wang and Cheng Chih Liu and Rolf W. Lortz and I. Sou}, journal={Nanotechnology}, year={2017}, volume={28 45}, pages={455601} }