Large area and depth-profiling dislocation imaging and strain analysis in Si/SiGe/Si heterostructures.

Abstract

We demonstrate the combined use of large area depth-profiling dislocation imaging and quantitative composition and strain measurement for a strained Si/SiGe/Si sample based on nondestructive techniques of electron beam-induced current (EBIC) and X-ray diffraction reciprocal space mapping (XRD RSM). Depth and improved spatial resolution is achieved for… (More)
DOI: 10.1017/S1431927614012963

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@article{Chen2014LargeAA, title={Large area and depth-profiling dislocation imaging and strain analysis in Si/SiGe/Si heterostructures.}, author={Xin Chen and Daniel Zuo and Seongwon Kim and James C Mabon and Mauro Sardela and Jianguo Wen and Jian-Min Zuo}, journal={Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada}, year={2014}, volume={20 5}, pages={1521-7} }