Large Tunneling Magnetoresistance in VSe2/MoS2 Magnetic Tunnel Junction.

@article{Zhou2019LargeTM,
  title={Large Tunneling Magnetoresistance in VSe2/MoS2 Magnetic Tunnel Junction.},
  author={Jiaqi Zhou and Junfeng Qiao and Chungang Duan and Arnaud Bournel and Kang L. Wang and Weisheng Zhao},
  journal={ACS applied materials \& interfaces},
  year={2019},
  volume={11 19},
  pages={
          17647-17653
        }
}
Two-dimensional (2D) van der Waals (vdW) materials provide the possibility of realizing heterostructures with coveted properties. Here, we report a theoretical investigation of the vdW magnetic tunnel junction (MTJ) based on VSe2/MoS2 heterojunction, where the VSe2 monolayer acts as a ferromagnet with room-temperature ferromagnetism. We propose the concept of spin-orbit torque (SOT) vdW MTJ with reliable reading and efficient writing operations. The nonequilibrium study reveals a large… 

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