Large-Signal Behavior of Junction Transistors

@article{Ebers1954LargeSignalBO,
  title={Large-Signal Behavior of Junction Transistors},
  author={J. J. Ebers and J. Moll},
  journal={Proceedings of the IRE},
  year={1954},
  volume={42},
  pages={1761-1772}
}
  • J. Ebers, J. Moll
  • Published 1 December 1954
  • Materials Science
  • Proceedings of the IRE
In the consideration of the junction transistor as a switch there are three characteristics of primary interest, the open impedance, the closed impedance, and the switching-time. A generalized two-terminal-pair theory of junction transistors is presented which is applicable, on a dc basis, in all regions of operation. Using this theory, the open and closed impedances of the transistor switch are expressible in terms of easily measurable transistor parameters. For the ideal transistor these… 
Large-Signal Transient Response of Junction Transistors
  • J. Moll
  • Physics
    Proceedings of the IRE
  • 1954
Transient response in the active region for junction transistors can be calculated from the conventional small-signal equivalent circuit. This small-signal characterization is adequate to calculate
A General Junction-Transistor Equivalent Circuit for Use in Large-Signal Switching Analysis
TLDR
A general medium-speed junction-transistor equivalent circuit that is valid for large- and small-signal operation, and the static base-to-emitter V-I characteristic is used extensively in the various analysis techniques and produces the proper response to a driving source of any internal resistance.
Transistor Switching Analysis
With the widespread application of junction transistors in switching applications, the need for a general method of analysis useful in the region of collector voltage saturation has become apparent.
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  • C. Huang
  • Physics
    IRE Transactions on Electron Devices
  • 1959
A physical theory has been formulated for the operation of junction transistors in the "collector-voltage-saturation" region or "on" region. Transistor characteristics in this region are important
Saturated inverted transistor modeling for small-signal applications
TLDR
The modeling and utilization of an inverted integrated n-p-n transistor as a controllable small-signal resistance and the application of this device to a programmable attenuator circuit is discussed and attenuation and harmonic distortion data are presented.
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This paper describes a new method of measuring the effective decay time of excess minority carriers in the base of junction transistors, the results of which show an approximately exponential decay
Junction Transistor Electronics
  • J. Moll
  • Materials Science
    Proceedings of the IRE
  • 1955
The density and kind of charge carriers in semiconductors are controlled by the density and nature of added impurities. The charge carriers (electrons and holes) move about in the crystal
Regeneration analysis of junction transistor multivibrators
  • D. Pederson
  • Engineering
    IRE Transactions on Circuit Theory
  • 1955
AN IMPORTANT aspect of transistor switching and pulse circuits is the exact manner in which the transistor switches from one state to another. Generally one state will involve transistor operation in
Analysis and design of a transistor blocking oscillator including inherent nonlinearities
An analysis of transistor blocking oscillators is presented which differs significantly from previous approaches in that the nonlinear dependence of collector current and base voltage upon base
Experimental verification of the physics and structure of the bipolar junction transistor
The authors present an electrical characterization of discrete bipolar junction transistor (BJT) devices, with nonuniform doped emitter and base zones. The measurement of the I-V and C-V
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