Large-Signal Analysis of Terahertz Generation in Submicrometer GaN Diodes

Abstract

The conditions for microwave power generation in a submicrometer GaN diode, with a relatively lightly doped active channel, coupled to an external resonant circuit are investigated. Applying a high-field electron transport model based on the local quasi-static approximation, we show that oscillations in group III-nitride diodes can be supported in the… (More)

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@article{Barry2010LargeSignalAO, title={Large-Signal Analysis of Terahertz Generation in Submicrometer GaN Diodes}, author={E. A. Barry and V. L Sokolov and K. W. Kim and R M Trew}, journal={IEEE Sensors Journal}, year={2010}, volume={10}, pages={765-771} }