# Large Magneto-Electric Resistance in the Topological Dirac Semimetal alpha Sn

@inproceedings{Zhang2021LargeMR, title={Large Magneto-Electric Resistance in the Topological Dirac Semimetal alpha Sn}, author={Yuejie Zhang and Vijaysankar Kalappattil and Chuanpu Liu and Steven S.-L. Zhang and Jinjun Ding and Uppalaiah Erugu and Jifa Tian and Jinke Tang and Mingzhong Wu}, year={2021} }

The spin-momentum locking of surface states in topological quantum materials can produce a resistance that scales linearly with magnetic and electric fields. Such a bilinear magneto-electric resistance (BMER) effect offers a completely new approach for magnetic storage and magnetic field sensing applications. The effects demonstrated so far, however, are relatively weak or for low temperatures. Strong room-temperature BMER effects have now been found in topological Dirac semimetal -Sn thin…

## References

SHOWING 1-10 OF 38 REFERENCES

### Theory of bilinear magneto-electric resistance from topological-insulator surface states

- PhysicsNanoScience + Engineering
- 2018

We theoretically investigate a new kind of nonlinear magnetoresistance on the surface of three-dimensional topological insulators (TIs). At variance with the unidirectional magnetoresistance (UMR)…

### Thin films of topological Kondo insulator candidate SmB6: Strong spin-orbit torque without exclusive surface conduction

- PhysicsScience Advances
- 2018

It is demonstrated that SmB 6 can generate a large SOT to switch an adjacent ferromagnetic layer, even at room temperature, and the effective SOT generated from SmB6 is comparable to that from β-W, one of the strongest SOT materials.

### Room-Temperature Spin-Orbit Torque Switching Induced by a Topological Insulator.

- PhysicsPhysical review letters
- 2017

This work reports spin-orbit torque switching in a TI-ferrimagnet heterostructure with perpendicular magnetic anisotropy at room temperature and demonstrates robust charge-spin conversion in TI and provides a direct avenue towards applicable TI-based spintronic devices.

### Room temperature magnetization switching in topological insulator-ferromagnet heterostructures by spin-orbit torques

- PhysicsNature Communications
- 2017

The authors report room temperature magnetization switching in topological insulator-ferromagnet heterostructures by spin-orbit torques, and identify a large charge-to-spin conversion efficiency in the thin Bi2Se3 films, where the topological surface states are dominant.

### Observation of Large Unidirectional Rashba Magnetoresistance in Ge(111).

- PhysicsPhysical review letters
- 2020

This work investigates the variation of the electrical resistance of Ge(111) grown epitaxially on semi-insulating Si(111), and ascribes the origin of this magnetoresistance to the interplay between the externally applied magnetic field and the pseudomagnetic field generated by the current applied in the spin-splitted subsurface states.

### Spin-Momentum-Locking Inhomogeneities as a Source of Bilinear Magnetoresistance in Topological Insulators.

- PhysicsPhysical review letters
- 2020

The proposed mechanism leads to the BMR even if the electronic band structure is isotropic (e.g., absence of hexagonal warping), and is shown to be dominant at lower Fermi energies.

### Bilinear magnetoelectric resistance as a probe of three-dimensional spin texture in topological surface states

- Physics
- 2017

Surface states of three-dimensional topological insulators exhibit the phenomenon of spin–momentum locking, whereby the orientation of an electron spin is determined by its momentum. Probing the spin…

### Switching of a Magnet by Spin‐Orbit Torque from a Topological Dirac Semimetal

- PhysicsAdvanced materials
- 2021

Current-induced magnetization switching enabled by TSS in a non-TI topological material, namely, a topological Dirac semimetal α-Sn, is reported, showing that the topologicalDiracSemimetalα-Sn is as promising as TI materials in terms of spintronic applications.

### Magnetization switching through giant spin-orbit torque in a magnetically doped topological insulator heterostructure.

- PhysicsNature materials
- 2014

The giant SOT and efficient current-induced magnetization switching exhibited by the bilayer heterostructure may lead to innovative spintronics applications such as ultralow power dissipation memory and logic devices.

### Theory of unidirectional magnetoresistance in magnetic heterostructures

- PhysicsNanoScience + Engineering
- 2017

We present a general drift-diffusion theory beyond linear response to explain the unidirectional magnetoresistance (UMR) observed in recent experiments in various magnetic heterostructures. In…