Large Linear Magnetoresistance and Shubnikov-de Hass Oscillations in Single Crystals of YPdBi Heusler Topological Insulators

@article{Wang2013LargeLM,
  title={Large Linear Magnetoresistance and Shubnikov-de Hass Oscillations in Single Crystals of YPdBi Heusler Topological Insulators},
  author={Wenhong Wang and Yin Du and Guizhou Xu and Xiaoming Zhang and Enke Liu and Zhongyuan Liu and Youguo Shi and Jinglan Chen and Guangheng Wu and Xi-Xiang Zhang},
  journal={Scientific Reports},
  year={2013},
  volume={3}
}
We report the observation of a large linear magnetoresistance (MR) and Shubnikov-de Hass (SdH) quantum oscillations in single crystals of YPdBi Heusler topological insulators. Owning to the successfully obtained the high-quality YPdBi single crystals, large non-saturating linear MR of as high as 350% at 5K and over 120% at 300 K under a moderate magnetic field of 7 T is observed. In addition to the large, field-linear MR, the samples exhibit pronounced SdH quantum oscillations at low… 

Figures from this paper

Colloquium : Topological band theory
First-principles band theory, properly augmented by topological considerations, has provided a remarkably successful framework for predicting new classes of topological materials. This Colloquium
Scattering-induced positive unsaturated linear magnetoresistance in LaAlO3/SrTiO3 two-dimensional electron gas system
In this paper, positive and unsaturated linear magnetoresistance (LMR) in an LaAlO3/SrTiO3 two-dimensional electron gas system is reported. LMR appears in this system over a wide range of
Anomalous magnetoresistance and magneto-thermal properties of the half-Heuslers, RPdSi (R = Y, Gd–Er)
TLDR
The study establishes a striking correlation of the commensurate/incommensurate AFM structure with that of positive/negative MR and MCE in this series of compounds, and emphasizes that such a framework applies to a large number of antiferromagnetic intermetallic systems.
Effect of lanthanide contraction on structural and transport properties of 4f electron doped Y1-x(Dy)xPdBi topological semi-metallic thin films
We report the effect of lanthanide contraction on structural, electrical and magneto-transport properties of Dy doped half Heusler Y1-x(Dy)xPdBi ( =0, 0.2, 0.5, 1) thin films grown by pulsed laser
Large linear magnetoresistance in single HgSe crystals induced by low-concentration Co impurity
A large linear magnetoresistance up to 600% at a magnetic field of 9 T was discovered in single HgSe:Co crystals with a low Co content (not exceeding 0.035 at. %). This was accompanied by a
Modeling of magneto-conductivity of bismuth selenide: a topological insulator
We report the magneto-conductivity analysis of Bi2Se3 single crystal at different temperatures in a magnetic field range of 14Tesla. The single crystals are grown by the self-flux method and
Strain driven emergence of topological non-triviality in YPdBi thin films
TLDR
This work demonstrates topological surface states on strained [110] oriented thin films of YPdBi grown on (100) MgO and observes the onset of superconductivity in these strained films highlighting the possibility of engineering a topological superconducting state.
The fabrication and characterization of half-Heusler YPdBi thin films
...
1
2
3
4
5
...

References

SHOWING 1-10 OF 41 REFERENCES
Dual evidence of surface Dirac states in thin cylindrical topological insulator Bi2Te3 nanowires
TLDR
A systematic comparative study on the cylindrical single-crystal Bi2Te3 nanowires of various diameters is carried out, and unambiguously dual evidence for the Dirac SS is reported.
Electronic and crystalline structures of zero band-gap LuPdBi thin films grown epitaxially on MgO(100)
Thin films of the proposed topological insulator LuPdBi—a Heusler compound with the C1b structure—were prepared on Ta-Mo-buffered MgO(100) substrates by co-sputtering from PdBi2 and Lu targets.
Extremely high electron mobility in a phonon-glass semimetal.
TLDR
A multilayered semimetal β-CuAgSe with glassy lattice is a new type of promising thermoelectric material suitable for chemical engineering.
Fabrication and characterization of semiconducting half‐Heusler YPtSb thin films
The semiconducting half-Heusler compound YPtSb has been predicted to convert into a topological insulator under the application of an appropriate degree of strain. In this study, p-type
Electronic and crystalline structures of zero band-gap PdLuBi thin films grown epitaxially on MgO(100). arXiv:1209.5710 [cond-mat.mtrl-sci
  • Electronic and crystalline structures of zero band-gap PdLuBi thin films grown epitaxially on MgO(100). arXiv:1209.5710 [cond-mat.mtrl-sci
  • 2012
Electronic structure and linear magnetoresistance of the gapless topological insulator PtLuSb
The present work reports on the experimental investigation of electronic structure and transport properties of the proposed topological insulator PtLuSb. The electronic structure was investigated by
Fabrication and characterization of the gapless half-Heusler YPtSb thin films
Half-Heusler YPtSb thin films were fabricated by magnetron co-sputtering method on MgO-buffered SiO2/Si(001) substrates. X-ray diffraction pattern and energy dispersive X-ray spectroscopy confirmed
High-field linear magneto-resistance in topological insulator Bi2Se3 thin films
Linear magneto-resistance is observed in high magnetic field in topological insulator Bi2Se3 films. As revealed by tilted magnetic field measurement, this linear magneto-resistance is associated with
Large Magnetoresistance in Few Layer Graphene Stacks with Current Perpendicular to Plane Geometry
TLDR
A large magnetoresistance (MR) effect of few-layers graphene between two non-magnetic metal electrodes with current perpendicular to graphene plane is studied, having the advantage of low power consumption for magnetic device applications.
Quantized Hall effect and Shubnikov-de Haas oscillations in highly doped Bi2Se3: evidence for layered transport of bulk carriers.
TLDR
It is shown that the observed magnetotransport features do not come from the sample surface, but arise from the bulk of the sample acting as many parallel 2D electron systems to give a multilayered quantum Hall effect.
...
1
2
3
4
5
...