Large Electro-Optic Effect in Tensile Strained Ge-on-Si Films

@article{Jongthammanurak2006LargeEE,
  title={Large Electro-Optic Effect in Tensile Strained Ge-on-Si Films},
  author={Samerkhae Jongthammanurak and J. Liu and Keiji Wada and D. Cannon and D. T. Danielson and Dong Pan and Jurgen Michel and L. C. Kimerling},
  journal={3rd IEEE International Conference on Group IV Photonics, 2006.},
  year={2006},
  pages={34-36}
}
We report the observation of an enhanced electro-optic effect in the weakly absorbing regime for tensile strained Ge epitaxial films. With Deltan/F=260 pm/V and Deltaalpha/alpha-3 the material has significant potential for field-induced phase or electro-absorption modulator devices 
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