Lack of Spatial Correlation in MOSFET Threshold Voltage Variation and Implications for Voltage Scaling

@article{Drego2009LackOS,
  title={Lack of Spatial Correlation in MOSFET Threshold Voltage Variation and Implications for Voltage Scaling},
  author={Nigel Drego and A. P. Chandrakasan and D. Boning},
  journal={IEEE Transactions on Semiconductor Manufacturing},
  year={2009},
  volume={22},
  pages={245-255}
}
Due to increased variation in modern process technology nodes, the spatial correlation of variation is a key issue for both modeling and design. We have created a large array test-structure to analyze the magnitude of spatial correlation of threshold voltage (VT) in a 180 nm CMOS process. The data from over 50 k measured devices per die indicates that there is no significant within-die spatial correlation in VT. Furthermore, the across-chip variation patterns between different die also do not… CONTINUE READING
Highly Cited
This paper has 34 citations. REVIEW CITATIONS

Citations

Publications citing this paper.
Showing 1-10 of 25 extracted citations

References

Publications referenced by this paper.
Showing 1-10 of 27 references

Similar Papers

Loading similar papers…