LRU-WSR: integration of LRU and writes sequence reordering for flash memory

  title={LRU-WSR: integration of LRU and writes sequence reordering for flash memory},
  author={Hoyoung Jung and Hyoki Shim and Sungmin Park and Sooyong Kang and Jaehyuk Cha},
  journal={IEEE Transactions on Consumer Electronics},
Most mobile devices are equipped with a NAND flash memory even if it has characteristics of not-in-place update and asymmetric I/O latencies among read, write, and erase operations: write/erase operations are much slower than a read operation in a flash memory. For the overall performance of a flash memory system, the buffer replacement policy should consider the above severely asymmetric I/O latencies. However, existing LRU buffer replacement algorithm cannot deal with the above problem. This… CONTINUE READING
Highly Influential
This paper has highly influenced 21 other papers. REVIEW HIGHLY INFLUENTIAL CITATIONS
Highly Cited
This paper has 126 citations. REVIEW CITATIONS


Publications citing this paper.
Showing 1-10 of 71 extracted citations

126 Citations

Citations per Year
Semantic Scholar estimates that this publication has 126 citations based on the available data.

See our FAQ for additional information.


Publications referenced by this paper.

Similar Papers

Loading similar papers…