LED manufacturing issues concerning gallium nitride-on-silicon (GaN-on-Si) technology and wafer scale up challenges

  title={LED manufacturing issues concerning gallium nitride-on-silicon (GaN-on-Si) technology and wafer scale up challenges},
  author={Shin-ya Nunoue and Toshiki Hikosaka and Hisashi Yoshida and Jumpei Tajima and Shigeya Kimura and Nao-haru Sugiyama and Koichi Tachibana and Tomonari Shioda and Taisuke Sato and Eiji Muramoto and Masaaki Onomura},
  journal={2013 IEEE International Electron Devices Meeting},
We demonstrated the growth of blue LED structures grown on 4-inch and 8-inch Si (111) substrates. GaN layers that have low threading dislocation density (TDD) of 1.6×108/cm2, which is comparable to state of the art in GaN on sapphire, can be obtained on 4-inch Si substrate by using a new TDD reduction technology using a silicon nitride (SiN) interlayer. A dependence of LED device performance on threading dislocation density was studied by using 4-inch Si substrate. A LED manufacturing… 

High Brightness GaN-on-Si Based Blue LEDs Grown on 150 mm Si Substrates Using Thin Buffer Layer Technology

The commercial adoption of GaN-on-Si light emitting diode (LED) chip technology is lagging behind incumbent sapphire substrates due to significantly longer growth time and poorer crystalline quality.

Optical properties of InGaN/GaN MQW LEDs grown on Si (111) substrates with low threading dislocation densities

We have grown blue light-emitting diodes (LEDs) with low threading dislocation densities (TDDs) by using SiN interlayers on Si (111) substrates. Our growth technique using SiN layers makes it

High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator

High-performance GaInP/AlGaInP multi-quantum well light-emitting diodes (LEDs) grown on a low threading dislocation density (TDD) germanium-on-insulator (GOI) substrate have been demonstrated. The

High-efficiency blue LEDs with thin AlGaN interlayers in InGaN/GaN MQWs grown on Si (111) substrates

We demonstrate high-efficiency blue light-emitting diodes (LEDs) with thin AlGaN interlayers in InGaN/GaN multiquantum wells (MQWs) grown on Si (111) substrates. The peak external quantum efficiency

Modeling of the wafer bow in GaN-on-Si epiwafers employing GaN/AlN multilayer buffer structures

We built a calculation model for the wafer bow in GaN-on-Si epiwafers employing GaN/AlN multilayer (ML) buffer structures by extending Stoney’s equation. The calculated bow and the derived strain in



High‐Quality GaN on Si Substrate Using AlGaN/AlN Intermediate Layer

A single crystal GaN thin film was successfully grown on a Si(111) substrate by means of atmospheric-pressure metalorganic chemical vapor deposition. An intermediate layer consisting of AlN and AlGaN

Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

The strain in GaN epitaxial layers grown on silicon (111) substrates by metalorganic vapor phase epitaxy has been investigated. The insertion of AlN/GaN superlattices was found to decrease the stress

Al doping in (1−101)GaN films grown on patterned (001)Si substrate

The effect of Al doping on crystalline and optical properties of semipolar (1−101)GaN was investigated. The samples were grown on a patterned (001)Si substrate by selective metal-organic vapor phase

Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy

The selective metalorganic vapor-phase epitaxy of wurtzite GaN was performed on a (111) silicon substrate using SiO2 grid mask pattern. Within window regions of (0.2–0.5) mm×(0.2–0.5) mm, GaN films

Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness

We present a simple method for the elimination of cracks in GaN layers grown on Si (111). Cracking of GaN on Si usually occurs due to large lattice and thermal mismatch of GaN and Si when layer

On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes

Reduction in the light-output power in GaN-based light-emitting diodes (LEDs) with increasing temperature is a well-known phenomenon. In this work, temperature dependent external-quantum-efficiency

Internal quantum efficiency and non-radiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

  • Q. DaiM. Schubert M. Banas
  • Materials Science
    2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference
  • 2009
Room-temperature photoluminescence measurements are performed on GaInN/GaN multiple quantum wells grown on GaN-on-sapphire templates with different threading-dislocation densities. The internal

Analytical investigation of spin transfer dynamics using a perpendicular-to-plane polarizer

  • K. LeeO. RedonB. Diény
  • Physics
    INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005.
  • 2005
An analytical investigation of the dynamic properties of spin-transfer torque (STT) devices comprising a perpendicular-to-plane polarizer (PERP) is reported. Several analytical solutions for PERP are

Molecular Beam Epitaxy of Group‐III Nitrides on Silicon Substrates: Growth, Properties and Device Applications

We report on the growth and properties of GaN films grown on Si(111) substrates by molecular beam epitaxy using ammonia. The properties of the layers show that our growth procedure is very efficient