LED manufacturing issues concerning gallium nitride-on-silicon (GaN-on-Si) technology and wafer scale up challenges

@article{Nunoue2013LEDMI,
  title={LED manufacturing issues concerning gallium nitride-on-silicon (GaN-on-Si) technology and wafer scale up challenges},
  author={S. Nunoue and T. Hikosaka and H. Yoshida and Jumpei Tajima and Shigeya Kimura and N. Sugiyama and K. Tachibana and T. Shioda and T. Sato and E. Muramoto and Masaaki Onomura},
  journal={2013 IEEE International Electron Devices Meeting},
  year={2013},
  pages={13.2.1-13.2.4}
}
We demonstrated the growth of blue LED structures grown on 4-inch and 8-inch Si (111) substrates. GaN layers that have low threading dislocation density (TDD) of 1.6×108/cm2, which is comparable to state of the art in GaN on sapphire, can be obtained on 4-inch Si substrate by using a new TDD reduction technology using a silicon nitride (SiN) interlayer. A dependence of LED device performance on threading dislocation density was studied by using 4-inch Si substrate. A LED manufacturing… Expand
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