LED manufacturing issues concerning gallium nitride-on-silicon (GaN-on-Si) technology and wafer scale up challenges

@article{Nunoue2013LEDMI,
  title={LED manufacturing issues concerning gallium nitride-on-silicon (GaN-on-Si) technology and wafer scale up challenges},
  author={Shin-ya Nunoue and Toshiki Hikosaka and Hisashi Yoshida and Jumpei Tajima and Shigeya Kimura and Nao-haru Sugiyama and Koichi Tachibana and Tomonari Shioda and Taisuke Sato and Eiji Muramoto and Masaaki Onomura},
  journal={2013 IEEE International Electron Devices Meeting},
  year={2013},
  pages={13.2.1-13.2.4}
}
We demonstrated the growth of blue LED structures grown on 4-inch and 8-inch Si (111) substrates. GaN layers that have low threading dislocation density (TDD) of 1.6×108/cm2, which is comparable to state of the art in GaN on sapphire, can be obtained on 4-inch Si substrate by using a new TDD reduction technology using a silicon nitride (SiN) interlayer. A dependence of LED device performance on threading dislocation density was studied by using 4-inch Si substrate. A LED manufacturing… 

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