LDMOS Technology for RF Power Amplifiers

@article{Theeuwen2012LDMOSTF,
  title={LDMOS Technology for RF Power Amplifiers},
  author={S. J. C. H. Theeuwen and Jawad Qureshi},
  journal={IEEE Transactions on Microwave Theory and Techniques},
  year={2012},
  volume={60},
  pages={1755-1763}
}
We show the status of laterally diffused metal-oxide-semiconductor (LDMOS) technology, which has been the device of choice for RF power applications for more than one decade. LDMOS fulfills the requirements for a wide range of class AB and pulsed applications, such as base station, broadcast, and microwave. We present state-of-the-art RF performance of the LDMOS transistor measured with a load-pull test setup, achieving class-AB drain efficiencies of 70% at 2 GHz for on-wafer and packaged… 

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