Corpus ID: 35025241

Kwong Fabrication and Characterization of Poly-Si Vertical Nanowire Thin Film Transistor P

  title={Kwong Fabrication and Characterization of Poly-Si Vertical Nanowire Thin Film Transistor P},
  author={Nansheng Shen and T. T. Le and H. Y. Yu and Zhi Xian Chen and K. T. Win and N. Singh and G. Q. Lo},
In this paper, we present a vertical nanowire thin film transistor with gate-all-around architecture, fabricated using CMOS compatible processes. A novel method of fabricating polysilicon vertical nanowires of diameter as small as 30 nm using wet-etch is presented. Both n-type and p-type vertical poly-silicon nanowire transistors exhibit superior electrical characteristics as compared to planar devices. On a poly-crystalline nanowire of 30 nm diameter, high Ion/Ioff ratio of 10, low drain… Expand

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  • IEEE Electron Device Lett., vol. 31,
  • 2010