Kinetic Velocity Model to Account for Ballistic Effects in the Drift-Diffusion Transport Approach

Abstract

This paper proposes a novel kinetic velocity model (KVM) for the drift-diffusion (DD) transport approach to describe ballistic effects. It also presents a simulation study of the ballistic effect in short-channel InGaAs and silicon FETs. Monte Carlo and subband Boltzmann transport equation results as well as DD simulations using the simple gate length… (More)

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Cite this paper

@article{Penzin2017KineticVM, title={Kinetic Velocity Model to Account for Ballistic Effects in the Drift-Diffusion Transport Approach}, author={Oleg Penzin and Lee Smith and A. Erlebach and Munkang Choi and Ko-Hsin Lee}, journal={IEEE Transactions on Electron Devices}, year={2017}, volume={64}, pages={4599-4606} }