Kinetic Processes in the CVD of S i c from CH 3 SiC 13H 2 in a Vertical Hot-Wall Reactor

@inproceedings{Langlais2017KineticPI,
  title={Kinetic Processes in the CVD of S i c from CH 3 SiC 13H 2 in a Vertical Hot-Wall Reactor},
  author={Francis Langlais and F. Loumagne and Damien Lespiaux and S. Schamm and R. Naslain},
  year={2017}
}
The chemical vapour deposition of Sic-based ceramics from the CH3SiC13-H2 precursor is investigated on the basis of large scale experimental and theoretical approaches. The use of a vertical cylindrical hot-wall LPCVD reactor permits to get a wide isothermal reaction zone with a creeping laminar flow around the substrate and a largely chemical control of… CONTINUE READING