Ka-band 2.3W power AlGaN/GaN heterojunction FET

@article{Kasahara2002Kaband2P,
  title={Ka-band 2.3W power AlGaN/GaN heterojunction FET},
  author={Kousuke Kasahara and Hiroshi Miyamoto and Yuji Ando and Yasuhiro Okamoto and Tomoko Nakayama and Masayuki Kuzuhara},
  journal={Digest. International Electron Devices Meeting,},
  year={2002},
  pages={677-680}
}
Describes the first successful watt-level Ka-band power operation of an AlGaN/GaN heterojunction FET fabricated on a SiC substrate. Taking the advantage of high breakdown voltage, high-current, and high-gain characteristics of the short-channel GaN-based FET, state-of-the-art high-power performance of >2W has been achieved at 30GHz from a single chip having a gate width of 0.36mm. The developed device with a gate length of 0.25/spl mu/m exhibited a linear gain of 8.8dB at 30GHz, indicating that… CONTINUE READING
Highly Cited
This paper has 30 citations. REVIEW CITATIONS
18 Citations
0 References
Similar Papers

Citations

Publications citing this paper.
Showing 1-10 of 18 extracted citations

Similar Papers

Loading similar papers…