• Corpus ID: 15784412

Ka-Band Wideband-Gap Solid-State Power Amplifier: General Architecture Considerations

@inproceedings{Khan2005KaBandWS,
  title={Ka-Band Wideband-Gap Solid-State Power Amplifier: General Architecture Considerations},
  author={P. Khan and Larry W. Epp and A. Silva},
  year={2005}
}
Motivated by recent advances in wideband-gap (WBG) gallium nitride (GaN) semiconductor technology, there is considerable interest in developing efficient solidstate power amplifiers (SSPAs) as an alternative to the traveling-wave tube amplifier (TWTA) for space applications. This article documents the general architecture considerations pertinent to developing SSPA architectures that can enable a 120-W, 40 percent power-added efficiency (PAE) SSPA at 31 to 36 GHz. This article develops an… 

A Ka-Band Wide-Bandgap Solid-State Power Amplifier: Architecture Performance Estimates

Motivated by recent advances in wide-bandgap (WBG) gallium nitride (GaN) semiconductor technology, there is considerable interest in developing efficient solidstate power amplifiers (SSPAs) as an

Ka-Band Wide-Bandgap Solid-State Power Amplifier: Hardware Validation

Proof-of-concept hardware is used to validate power-combining technologies that may enable a 120-W, 40 percent power-added efficiency (PAE) SSPA, and performance estimates of the three proposed architectures are reported.

Ka-Band Wide-Bandgap Solid-State Power Amplifier: Prototype Combiner Spurious Mode Suppression and Power Constraints

Results of prototype hardware activities related to a 120-W, 32-GHz (Ka-band) solid-state power amplifier (SSPA) architecture study are presented. Spurious mode suppression and the power-handling

5-W Microwave Integrated Circuits (MIC) Gallium Nitride (GaN) Class F Power Amplifier Operating at 2.8 GHz

Abstract : A key component of microwave telecommunication systems is the power amplifier (PA). The design parameters of a communication system, such as link performance, power budget, and thermal

Linearity and Efficiency Improvement Using Harmonic Suppression Power Combiner in GaN S-band Power Amplifier Design

In this paper, a Gallium Nitride (GaN) power amplifier (PA) design implementing a novel power combiner with harmonic suppression is presented. This new combiner, denoted as ‘Wei-Chi’ after the

A High-Power $Ka$-Band (31–36 GHz) Solid-State Amplifier Based on Low-Loss Corporate Waveguide Combining

A method of using low-loss waveguide septum combiners is developed into a high-power -band (31-36 GHz) amplifier producing 50 W at 33 GHz (Ka-band) using 32 low-power (>2 W) solid-state amplifier

An efficient AlGaN/GaN HEMT power amplifier MMIC at K-Band

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A Multi-Beam Direction- and Polarization-Agile mm-Wave Front-End for 5G Communications

A millimeter wave multi-beam direction- and polarization-agile front-end for 5th generation of wireless communications at 30 GHz is presented. Active voltage summing was used for the lossless

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Product Data Sheets for the Wavestream Corporation Models GA103031 and GA153031, Wavestream Corporation

  • Product Data Sheets for the Wavestream Corporation Models GA103031 and GA153031, Wavestream Corporation