• DOI:10.1063/1.1542679
• Corpus ID: 118432105

Junction parameter control of Bi2Sr2CaCu2O8+δ stacked junctions by annealing

@article{Inomata2003JunctionPC,
  title={Junction parameter control of Bi2Sr2CaCu2O8+$\delta$ stacked junctions by annealing},
  author={K. Inomata and Takeshi Kawae and Kenji Nakajima and Sang‐Jae Kim and Taro Yamashita},
  journal={Applied Physics Letters},
  year={2003},
  volume={82},
  pages={769-771}
}

• K. Inomata, T. Kawae, +2 authors T. Yamashita
• Published 28 January 2003
• Physics, Materials Science
• Applied Physics Letters

The control of the critical current density (Jc) and the junction resistance (RN) along the c axis of intrinsic Josephson junctions (IJJs) on a high-Tc superconductor is very important for applying the IJJs to electronic devices. For controlling these junction parameters, we have clarified the relationship of Jc, RN, and the carrier density in Bi2Sr2CaCu2O8+δ (Bi-2212) whiskers by changing the carrier density with an annealing process. As a result, the Jc decreased, and the RN increased systematically when the carrier density decreased. The values of Jc and RN could be controlled by a change in the carrier density.