Junction delineation of 0.15 /spl mu/m MOS devices using scanning capacitance microscopy

@article{Kleiman1997JunctionDO,
  title={Junction delineation of 0.15 /spl mu/m MOS devices using scanning capacitance microscopy},
  author={R M Kleiman and M. L. O'Malley and F. Baumann and J. P. Garno and G. Timp},
  journal={International Electron Devices Meeting. IEDM Technical Digest},
  year={1997},
  pages={691-694}
}
With the increased scaling down of MOSFET dimensions, delineation of the p-n junction becomes increasingly important. We have studied cross-sectioned 0.15 micron process MOSFETs using a newly developed technique, scanning capacitance microscopy (SCM), and report the first direct measurement of the channel length for these state-of-the-art devices. Using a device simulator we have quantitatively established the connection between the dopant profile and the SCM response while scanning across a p… CONTINUE READING