Junction Termination Extension Implementing Drive-in Diffusion of Boron for High-Voltage <emphasis emphasistype="roman">SiC</emphasis> Devices


A novel method of graded junction termination extension (JTE) formation for high-voltage 4H-SiC power devices is presented. Unlike conventional multiimplantation or tapered thickness mask approaches utilizing several photolithography steps, the new termination technique utilizes a single mask with window areas varied laterally away from the main junction, a… (More)


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