Ion channeling studies on mixed phases formed in MOCVD grown Mg-doped GaN on Al/sub 2/O/sub 3/ (0001)

@article{Sundaravel1999IonCS,
  title={Ion channeling studies on mixed phases formed in MOCVD grown Mg-doped GaN on Al/sub 2/O/sub 3/ (0001)},
  author={B. Sundaravel and E. Z. Luo and Jianbin Xu and Ian H Wilson and P G Fong and Liang Wang and C. Surya},
  journal={Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)},
  year={1999},
  pages={148-152}
}
Rutherford backscattering spectrometry (RBS) and channeling is used to determine the presence of wurtzite and zinc-blende phases of MOCVD grown Mg-doped GaN(0001) on Al/sub 2/O/sub 3/(0001) substrate with GaN buffer layer from the off-normal axial scans and is complemented with high resolution X-ray diffraction measurements. The in-plane orientation of wurtzite phase is found to be GaN [101~0]/spl par/A1/sub 2/O/sub 3/[101~0]. Presence of stacking faults and dislocations at different depths are… CONTINUE READING

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