Ion beam sputtering for progressive reduction of nanostructures dimensions

@article{Savolainen2004IonBS,
  title={Ion beam sputtering for progressive reduction of nanostructures dimensions},
  author={Marko T. Savolainen and Vladimir Touboltsev and P. J. Koppinen and K. P. Riikonen and Konstantin Yu Arutyunov},
  journal={Applied Physics A},
  year={2004},
  volume={79},
  pages={1769-1773}
}
An ion beam-based dry etching method has been developed for the progressive reduction of the dimensions of prefabricated nanostructures. The method has been successfully applied to aluminum nanowires and aluminum single electron transistors (SET). The method is based on removal of material from the structures when exposed to energetic argon ions, and it was shown to be applicable to the same sample many times. Electrical measurements, and samples imaged in-between the sputtering sessions… 

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