Ion-beam processing of silicon at keV energies: A molecular-dynamics study.

@article{Caturla1996IonbeamPO,
  title={Ion-beam processing of silicon at keV energies: A molecular-dynamics study.},
  author={Caturla and T D{\'i}azdelaRubia and Marqu{\'e}s and Gilmer},
  journal={Physical review. B, Condensed matter},
  year={1996},
  volume={54 23},
  pages={
          16683-16695
        }
}
We discuss molecular-dynamics simulations of ion damage in silicon, with emphasis on the effects of ion mass and energy. We employ the Stillinger-Weber potential for silicon, suitably modified to account for high-energy collisions between dopant-silicon and silicon-silicon pairs. The computational cells contain up to 10{sup 6} atoms and these are bombarded by B and As atoms at incident energies from 1 keV up to 15 keV. We show that the displacement cascade results in the production of amorphous… Expand
Morphology of as-implanted damage in silicon: a molecular dynamics study
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