Ion beam induced modification of lattice strains in In0.1Ga0.9As/GaAs system

@inproceedings{Rao2003IonBI,
  title={Ion beam induced modification of lattice strains in In0.1Ga0.9As/GaAs system},
  author={S Siva Nageswara Rao and Algebras K. Rajam and Azher Majid Siddiqui and Devesh Kumar Avasthi and T. Srinivasan and Umesh Tiwari and Surinder K Mehta and Rangarajan Muralidharan and R. K. Jain and Anirban Pathak},
  year={2003}
}
Abstract The effects of 150 MeV Ag ion irradiation on the molecular beam epitaxially grown In 0.1 Ga 0.9 As/GaAs samples have been studied using high resolution X-ray diffraction (HRXRD). Our earlier experiments suggest that the compressive strain will decrease due to ion beam mixing effects in an initially strained system. Similarly a tensile strain will be induced in an initially lattice matched system. These studies are being performed to explore the possibility of spatial bandgap tuning for… CONTINUE READING