Ion beam damage-induced masking for photoelectrochemical etching of III-V semiconductors

@inproceedings{Chi1986IonBD,
  title={Ion beam damage-induced masking for photoelectrochemical etching of III-V semiconductors},
  author={Gou-chung Chi and F. W. Ostermayer and Kevin D. Cummings and Lloyd R. Harriott},
  year={1986}
}
Ion implantation damage has been used as a mask for patterning III‐V semiconductors by photoelectrochemical etching. The damage inhibits etching and the optical absorption of the semiconductor prevents light from penetrating through the damaged layer. Patterns of ion implantation damage have been produced on the surface of InP, InGaAs, and InGaAsP by implantation of 50 and 150‐keV Be+ ions through a photoresist mask and with a focused beam of 20‐keV Ga+ ions. Subsequent photoelectrochemical… CONTINUE READING