Investigations of impact ionization phenomena in advanced transistors and speed-power improvement of BiMOS SRAM cells based on reverse base current effect

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@article{Bubennikov2001InvestigationsOI, title={Investigations of impact ionization phenomena in advanced transistors and speed-power improvement of BiMOS SRAM cells based on reverse base current effect}, author={Alexander N. Bubennikov and Andrey V. Zykov}, journal={Microelectronics Reliability}, year={2001}, volume={41}, pages={219-228} }