Investigations into molecular beam epitaxial growth of InAs / GaSb superlattices

@inproceedings{Murray2015InvestigationsIM,
  title={Investigations into molecular beam epitaxial growth of InAs / GaSb superlattices},
  author={Lee Michael Murray},
  year={2015}
}
Approved: ____________________________________ Thesis Supervisor ____________________________________ Title and Department ____________________________________ Date 1 INVESTIGATIONS INTO MOLECULAR BEAM EPITAXIAL GROWTH OF INAS/GASB SUPERLATTICES by Lee Michael Murray A thesis submitted in partial fulfillment of the requirements for the Doctor of Philosophy degree in Physics in the Graduate College of The University of Iowa 

From This Paper

Topics from this paper.

References

Publications referenced by this paper.
Showing 1-4 of 4 references

Transmission Electron Microscopy: A textbook for Materials

  • D. B. Williams, C. B. Carter
  • 2009

Causes and Elimination of Pyramidal Defects in GaSb-Based Epitaxial Layers, submitted to J. Vac

  • L. M. Murray, A. Yildirim, S. R. Provence, D. T. Norton, T. F. Boggess, J. P. Prineas
  • J. Appl. Phys. 95,
  • 2004

Epitaxy!: physical principles and technical implementation, chapter 1, pages

  • M. A. Herman, W. Richter, H. Sitter
  • 2004

Molecular beam epitaxy: Applications to key materials, edited

  • P. I. Cohen, G. S. Petrich, G. J. Whaley
  • Chapter 8,
  • 1995

Similar Papers

Loading similar papers…