Investigation on the temperature dependence of the performance of solution processed Si-Zn-Sn oxide thin film transistor.

Abstract

The performance of the oxide thin film transistors (TFTs) using silicon zinc tin oxide (SZTO) as active channel layer fabricated by solution process method has been reported investigated depending on the annealing temperature. The SZTO TFTs fabricated on silicon wafers exhibit a mobility of 0.591 cm2/Vs, a subthreshold swing (S.S) of 0.44 V/decade, a threshold voltage of 0.7 V and an I(on/off) ratio of 4.4 x 10(6).

Cite this paper

@article{Choi2013InvestigationOT, title={Investigation on the temperature dependence of the performance of solution processed Si-Zn-Sn oxide thin film transistor.}, author={Jun Young Choi and Sang Kim and Sang Yeol Lee}, journal={Journal of nanoscience and nanotechnology}, year={2013}, volume={13 10}, pages={7089-91} }