Investigation on the reliability corner of pMOSFETs with drain-bias-dependent NBTI degradation

Abstract

A detailed experimental study on the reliability corner of pMOSFETs with drain-bias-dependent NBTI degradation was conducted. Unlike to the conventional NBTI degradation, the concurrent drain bias stresses exhibit a complex correlative effect in both degradation and recovery stages. Our results show that the degradation of NBTI with drain bias at Vdd becomes the worse reliability corner for pMOSFETs with ultra thin gate oxynitride. A new evaluation method for pMOSFET reliability was proposed.

6 Figures and Tables

Cite this paper

@article{He2010InvestigationOT, title={Investigation on the reliability corner of pMOSFETs with drain-bias-dependent NBTI degradation}, author={YanDong He and Ganggang Zhang and Xiaorong Duan}, journal={2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology}, year={2010}, pages={1704-1706} }