Investigation on epitaxial lateral overgrowth of InGaN/GaN multi-quantum-well nanowires.

Abstract

To achieve semipolar InGaN/GaN multi-quantum-well (MQW) structure, we fabricate InGaN/GaN MQW nanowires by using a combination of selectively epitaxial lateral overgrowth and patterned GaN/sapphire substrate techniques. Basing on the SEM observations, the nanowires along different crystal orientation of GaN substrate have various surface morphologies… (More)

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