Investigation of the four-gate action in G/sup 4/-FETs

@article{Dufrene2004InvestigationOT,
  title={Investigation of the four-gate action in G/sup 4/-FETs},
  author={B. Dufrene and Kerem Akarvardar and Sorin Cristoloveanu and B. J. Blalock and Rita Gentil and E. A. Kolawa and M. M. Mojarradi},
  journal={IEEE Transactions on Electron Devices},
  year={2004},
  volume={51},
  pages={1931-1935}
}
The four-gate silicon-on-insulator transistor (G/sup 4/-FET) combines MOS and JFET actions in a single transistor to control the drain current. The various operation modes of the G/sup 4/-FET are analyzed, based on the measured current-voltage, transconductance and threshold characteristics. The main parameters (threshold voltage, swing, mobility) are extracted and shown to be optimized for particular combinations of gate biasing. Numerical simulations are used to clarify the role of volume or… CONTINUE READING
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