Investigation of the current resolution limits of advanced extreme ultraviolet (EUV) resists

  title={Investigation of the current resolution limits of advanced extreme ultraviolet (EUV) resists},
  author={Patrick P. Naulleau and Clemens Rammeloo and Jason Cain and Kim R. Dean and Paul E. Denham and Kenneth A. Goldberg and Brian Hoef and Bruno M. La Fontaine and Adam Richard Pawloski and Carl E. Larson and Gregory M. Wallraff},
  booktitle={SPIE Advanced Lithography},
The past two years has brought tremendous improvements in the crucial area of resists for extreme ultraviolet (EUV) lithography. Nested and isolated line resolutions approaching 30 nm and 25 nm, respectively, have been demonstrated. These advances have been enabled, in large part, by the high-numerical (0.3) EUV imaging capabilities provided by the Berkeley microfield exposure tool (MET). Here we investigate the resolution limits in several advanced EUV resists using the Berkeley MET… 
Progress in EUV photoresist technology
Resist resolution remains a significant issue for EUV. Strong concerns persist regarding the use of chemically amplified resists owing to their diffusion characteristics. Current EUV resist
Lithographic metrics for the determination of intrinsic resolution limits in EUV resists
Resist resolution remains a significant issue for EUV. Strong concerns remain with the use of chemically amplified resist owing to their diffusion characteristics. Currently EUV resist development is
Are extreme ultraviolet resists ready for the 32nm node
The International Technology Roadmap for Semiconductors (ITRS) insertion point of extreme ultraviolet (EUV) lithography is the 32nm half-pitch node, and significant worldwide effort is being focused
Performance of chemically amplified resists at half-pitch of 45 nm and below
The chemically-amplified resists have been exposed by hyper-NA 193nm immersion and EUV lithography. Patterns with 45nm half-pitch and below are investigated for process windows and line-edge
Balancing lithographic performance and resist outgassing in EUV resists
Resolution (R), line-width roughness (L), and sensitivity (S) are three key indices describing the performance of a resist. When optimizing a resist to compromise the RLS trade-off in
Extreme ultraviolet lithography: From research to manufacturing
The authors explore the critical issues remaining for the introduction of extreme ultraviolet lithography (EUVL) in semiconductor manufacturing. Among all technical issues, source power appears to be
Evaluation of EUV resist materials for use at the 32 nm half-pitch node
Progress is evident in all areas of EUV resist patterning, particularly contact/via and ultrathin resist film performance, and a simplified figure-of-merit approach is described useful for more quantitative assessment of the strengths and weaknesses of current materials.
Application of the Energetiq EQ-10 electrodeless Z-Pinch EUV light source in outgassing and exposure of EUV photoresist
Formulating high sensitivity and high resolution EUV Resists is a critical issue gating the adoption of EUV lithography. The ability of resist manufacturers to quickly screen outgassing rates and
An investigation of EUV lithography defectivity
We have used ASML's full field step-and-scan exposure tool for extreme ultraviolet lithography (EUVL), known as an Alpha Demo Tool, to investigate one of the critical issues identified for EUVL,
Correlation of EUV resist performance metrics in micro-exposure and full-field EUV projection tools
The continuing utility of blur-based metrics in guiding resist selection for use in EUV process development and integration at the 22 nm logic node and below is confirmed, providing an exposure-tool independent set of metrics for assessing progress in EUv resist development.


EUV interferometric testing and alignment of the 0.3-NA MET optic
Extreme ultraviolet (EUV) interferometry has been successfully performed for the first time at 0.3 numerical aperture (NA). Extensive EUV “at-wavelength” testing including alignment, was performed on
Status of EUV micro-exposure capabilities at the ALS using the 0.3-NA MET optic
The success of recent static printing experiments at Lawrence Berkeley National Laboratory’s Advanced Light Source (ALS) using the EUV LLC Engineering Test Stand (ETS) Set-2 optic has demonstrated
Lithographic measurement of EUV flare in the 0.3-NA micro exposure tool optic at the Advanced Laser Source
The level of flare present in a 0.3-NA EUV optic (the MET optic) at the Advanced Light Source at Lawrence Berkeley National Laboratory is measured using a lithographic method. Photoresist behavior at
EUV microexposures at the ALS using the 0.3-NA MET projection optics
The recent development of high numerical aperture (NA) EUV optics such as the 0.3-NA Micro Exposure Tool (MET) optic has given rise to a new class of ultra-high resolution microexposure stations.
Lithographic characterization of the field dependent astigmatism and alignment stability of a 0.3 numerical aperture extreme ultraviolet microfield optic
Here we describe the lithographic characterization of the astigmatism in a 0.3-numerical aperture extreme ultraviolet (EUV) microexposure tool installed at Lawrence Berkeley National Laboratory. The
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Lithographic Characterization of the Spherical Error in an EUV Optic Using a Programmable Pupil Fill Illuminator,” Appl
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