• DOI:10.5120/IJAIS13-450992
• Corpus ID: 15148931

Investigation of the Electronic -Properties of Al-CdTe-Au Schottky Diode

@article{Alhaddad2013InvestigationOT,
  title={Investigation of the Electronic -Properties of Al-CdTe-Au Schottky Diode},
  author={Raad M. S. Al-haddad and Suha H. Ibraheem and Ziad M. Abood and Issam Mohammad Ibrahim},
  journal={International Journal of Applied Information Systems},
  year={2013},
  volume={6},
  pages={6-10}
}

• R. Al-haddad, S. Ibraheem, +1 author I. Ibrahim
• Published 10 October 2013
• Materials Science
• International Journal of Applied Information Systems

In order to interpret the effect of semiconductor thickness and annealing temperature on the electrical characteristics of Al/nCdTe/Au Schottky barrier diodes (SBDs), the forward and reverse bias current density-voltage (J-V) characteristics of these SBDs have been investigated in dark. Both of the values forward and reverse currents have decrease with increasing annealing temperature as well as the increase of thickness. The ideality factor (η), saturation current density (Js) and the barrier height (ΦB) were calculated using J-V plots. Also series resistance (Rs), shunt resistance (Rsh) has been calculated by RV plots. The measurements showed that these parameters are affected by annealing temperature and the change in the thickness.