Investigation of the Electronic -Properties of Al-CdTe-Au Schottky Diode

@article{Alhaddad2013InvestigationOT,
  title={Investigation of the Electronic -Properties of Al-CdTe-Au Schottky Diode},
  author={Raad M. S. Al-haddad and Suha H. Ibraheem and Ziad M. Abood and Issam Mohammad Ibrahim},
  journal={International Journal of Applied Information Systems},
  year={2013},
  volume={6},
  pages={6-10}
}
In order to interpret the effect of semiconductor thickness and annealing temperature on the electrical characteristics of Al/nCdTe/Au Schottky barrier diodes (SBDs), the forward and reverse bias current density-voltage (J-V) characteristics of these SBDs have been investigated in dark. Both of the values forward and reverse currents have decrease with increasing annealing temperature as well as the increase of thickness. The ideality factor (η), saturation current density (Js) and the barrier… 

Figures and Tables from this paper

References

SHOWING 1-10 OF 21 REFERENCES
Current-voltage characteristics of Ag, Al, Ni-(n)CdTe junctions
Schottky barriers of Ag, Al, Ni-(n)CdTe structures have been prepared and studied. The films were prepared by rf sputtering and doped with Cd metal. Diode ideality factor of these junctions are
Electronic structure, structural and optical properties of thermally evaporated CdTe thin films
Abstract Thin films of CdTe were deposited on glass substrates by thermal evaporation. From the XRD measurements it is found that the films are of zinc-blende-type structure. The lattice parameter
Metal–Semiconductor Contacts
A review is given of our present knowledge of metal-semiconductor contacts. Topics covered include the factors that determine the height of the Schottky barrier, its current/voltage characteristics,
Structural, optical, photoluminescence, dielectric and electrical studies of vacuum-evaporated CdTe thin films
Highly-oriented CdTe thin films were fabricated on quartz and glass substrates by thermal evaporation technique in the vacuum of about 2 × 10 − 5 torr. The CdTe thin films were characterized by X-ray
Physical properties of ZnO:F obtained from a fresh and aged solution of zinc acetate and zinc acetylacetonate
Abstract Fluorine-doped zinc oxide thin films, ZnO:F, were deposited by the spray pyrolysis technique on sodocalcic glass substrates. Two different zinc precursors were used separately, namely, zinc
The Physics of Semiconductor Devices
  • S. M. Sze
  • Springer Proceedings in Physics
  • 2019
• Density of States function, g(E) • Fermi-Dirac Distribution function, f(E) • Distribution Function and Fermi Energy • Equilibrium Distribution of Electrons and Holes • n0 and p0 Equation •
"J."
however (for it was the literal soul of the life of the Redeemer, John xv. io), is the peculiar token of fellowship with the Redeemer. That love to God (what is meant here is not God’s love to men)
Semiconductor devices
Semiconductor Devices
Current–voltage characteristics of Ag
  • Al, Ni-(n) CdTe junctions", Bull. Mater. Sci., 24, 4, pp. 411–414,
  • 2001
Structural, optical, otoluminescence, dielectric and electrical studies of vacuum- evaporated CdTe thin films
  • Bull. Mater. Sci.,
  • 2012
...
1
2
3
...