Investigation of the Electronic -Properties of Al-CdTe-Au Schottky Diode

@article{Alhaddad2013InvestigationOT,
  title={Investigation of the Electronic -Properties of Al-CdTe-Au Schottky Diode},
  author={Raad M. S. Al-haddad and Suha H. Ibraheem and Ziad M. Abood and Issam Mohammad Ibrahim},
  journal={International Journal of Applied Information Systems},
  year={2013},
  volume={6},
  pages={6-10}
}
In order to interpret the effect of semiconductor thickness and annealing temperature on the electrical characteristics of Al/nCdTe/Au Schottky barrier diodes (SBDs), the forward and reverse bias current density-voltage (J-V) characteristics of these SBDs have been investigated in dark. Both of the values forward and reverse currents have decrease with increasing annealing temperature as well as the increase of thickness. The ideality factor (η), saturation current density (Js) and the barrier… 
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