Investigation of surface recombination processes of semiconducting materials using ultrafast laser assisted Atom Probe Tomography

@article{Mazumder2011InvestigationOS,
  title={Investigation of surface recombination processes of semiconducting materials using ultrafast laser assisted Atom Probe Tomography},
  author={Bhasker Mazumder and François Vurpillot and Angela Vella and Bernard Deconihout and Gilles Martel},
  journal={2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference (CLEO EUROPE/EQEC)},
  year={2011},
  pages={1-1}
}
Ultrafast laser assisted atom probe tomography (LA-APT) is a powerful nano analysing instrument that provides 3D maps of the chemical distribution in small volumes of either metallic and semiconducting materials or even high-K oxides with a sub nanometre spatial resolution [1]. Despite that these materials are key resources for the future in micro- and nano… CONTINUE READING