Investigation of step graded channel heterostructure field effect transistor with high gate voltage swing

@article{Yu2004InvestigationOS,
  title={Investigation of step graded channel heterostructure field effect transistor with high gate voltage swing},
  author={Shu-Jenn Yu and Wei-Chou Hsu and Yih-Juan Li and Yeong-Jia Chen},
  journal={The Fourth International Workshop on Junction Technology, 2004. IWJT '04.},
  year={2004},
  pages={210-212}
}
In order to enhance the electron mobility we use step graded channel structure in the heterostructure field effect transistor to reduce Coulomb scattering. The electrons are far away from the AlGaAs/InGaAs interface. We fabricated successfully and obtained high drain current density and large gate voltage swing. For a 1.2/spl times/100 /spl mu/m/sup 2/ gate dimension, the maximum saturation drain current density is 373 mA/mm and the maximum extrinsic transconductance is 148 mS/mm along with the… CONTINUE READING