Investigation of radiative tunneling in GaN / InGaN single quantum well light-emitting diodes

@inproceedings{Cao2002InvestigationOR,
  title={Investigation of radiative tunneling in GaN / InGaN single quantum well light-emitting diodes},
  author={X. A. Cao and S. F. LeBoeuf and Kyung Ho Kim and P. M. Sandvik and Edward B. Stokes and Abasifreke U. Ebong and Deborah Walker and J. W. Kretchmer and Jiao Y. Y. Lin and H. X. Jiang},
  year={2002}
}
The mechanisms of carrier injection and recombination in a GaN/InGaN single quantum well light-emitting diodes have been studied. Strong defect-assisted tunneling behavior has been observed in both forward and reverse current– voltage characteristics. In addition to band-edge emission at 400 nm, the electroluminescence has also been attributed to radiative tunneling from band-to-deep level states and band-to-band tail states. The approximately current-squared dependence of light intensity at… CONTINUE READING

References

Publications referenced by this paper.

Physics of semiconductor devices. 2nd ed

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  • 1981
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