Investigation of photoluminescence from Ge<inf>1&#x2212;x</inf>Sn<inf>x</inf>: A CMOS-compatible material grown on Si via CVD

Abstract

Photoluminescence (PL) from Ge<sub>1-x</sub>Sn<sub>x</sub> grown on Si by CVD was investigated for Sn composition of 0.9, 3.2, 6, and 7%, respectively. The direct and indirect band transitions were analyzed at different temperatures. 

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