Investigation of negative bias temperature instability dependence on fin width of silicon-on-insulator-fin-based field effect transistors

@inproceedings{Young2015InvestigationON,
  title={Investigation of negative bias temperature instability dependence on fin width of silicon-on-insulator-fin-based field effect transistors},
  author={Chadwin D. Young and Arnost Neugroschel and Kausik Majumdar and Ken Matthews and Zhe Wang and Chris Hobbs},
  year={2015}
}

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Effects of fin width on performance and reliability for N- and P-type FinFETs

  • 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
  • 2016
VIEW 4 EXCERPTS
CITES BACKGROUND
HIGHLY INFLUENCED

The Observation of Width Quantization Impact on Device Performance and Reliability for High-k/Metal Tri-Gate FinFET

  • IEEE Transactions on Device and Materials Reliability
  • 2016
VIEW 2 EXCERPTS
CITES METHODS & BACKGROUND

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