Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs

Abstract

This paper investigates the effect of spatially localized versus uniform strain on the performance of n-type InAs nanowire Tunnel FETs. To this purpose we make use of a simulator based on the NEGF formalism and employing an eight-band k·p Hamiltonian, describing the strain implicitly as a modification of the band-structure. Our results indicate that, when… (More)

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