Investigation of deep level centers in i- and n-layers of GaAs pin - diodes

@article{Toompuu2014InvestigationOD,
  title={Investigation of deep level centers in i- and n-layers of GaAs pin - diodes},
  author={Jana Toompuu and Oleg V Korolkov and Natalja Sleptsuk and Toomas Rang},
  journal={2014 14th Biennial Baltic Electronic Conference (BEC)},
  year={2014},
  pages={25-28}
}
This work presents the results of capacitance-voltage (C-V), current-voltage (I-V) and deep level transient spectroscopy (DLTS) on special Schottky diode samples fabricated on the basis of GaAs p+-pin-n+ structure. It is shown that in the i-layer and n-region bordering the i-layer is observed “anomalous” stationary capacitance temperature change. DLTS… CONTINUE READING