Investigation of circuit-level oxide degradation and its effect on CMOS inverter operation and MOSFET characteristics

Abstract

Circuit-level oxide degradation effects on CMOS inverter circuit operation and individual MOSFET behavior is investigated. Individual PMOSFET and NMOSFET devices are assembled off-wafer in the inverter configuration through a switch matrix. A range of gate oxide degradation mechanisms are induced by applying a ramped voltage stress (RVS) of various… (More)

Topics

6 Figures and Tables