Investigation of charge loss mechanisms IN 3D TANOS cylindrical junction-less charge trapping memory

@article{Li2014InvestigationOC,
  title={Investigation of charge loss mechanisms IN 3D TANOS cylindrical junction-less charge trapping memory},
  author={Xin kai Li and Zongliang Huo and Lei Jin and Yan Wang and Jing Liu and Dandan Jiang and Xiaonan Yang and Ming Liu},
  journal={2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)},
  year={2014},
  pages={1-3}
}
  • Xin kai Li, Zongliang Huo, +5 authors Ming Liu
  • Published in
    12th IEEE International…
    2014
  • Materials Science, Chemistry
  • This paper presents a detailed simulation analysis of the charge loss mechanisms in 3D TANOS cylindrical junction-less charge trapping memory devices. For the programmed state, the role of tunneling through the bottom oxide and top oxide in vertical charge loss were compared, and the latter is found to be the dominant component. It is also found that lateral charge migration shows dependence on the shape of charge trapping layer. And the winding charge trapping layer shows favorable lateral… CONTINUE READING

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