Investigation of Polysilazane-Based $\hbox{SiO}_{2}$ Gate Insulator for Oxide Semiconductor Thin-Film Transistors

@article{Tu2013InvestigationOP,
  title={Investigation of Polysilazane-Based \$\hbox\{SiO\}_\{2\}\$  Gate Insulator for Oxide Semiconductor Thin-Film Transistors},
  author={Huynh Thi Cam Tu and Satoshi Inoue and Phan Trong Tue and Takaaki Miyasako and Tatsuya Shimoda},
  journal={IEEE Transactions on Electron Devices},
  year={2013},
  volume={60},
  pages={1149-1153}
}
To realize all-solution-processed oxide semiconductor thin-film transistors (TFTs), for use in display applications in particular, a polysilazane-based SiO<sub>2</sub> gate insulator is investigated. The gate leakage current was reduced to 1 × 10<sup>-8</sup> A/cm<sup>2</sup> at 1 MV/cm. TFTs were successfully fabricated using a ZrInZnO precursor solution… CONTINUE READING