Investigation of NBTI and PBTI induced aging in different LUT implementations

@article{Kiamehr2011InvestigationON,
  title={Investigation of NBTI and PBTI induced aging in different LUT implementations},
  author={Saman Kiamehr and Abdulazim Amouri and Mehdi Baradaran Tahoori},
  journal={2011 International Conference on Field-Programmable Technology},
  year={2011},
  pages={1-8}
}
Transistor aging mostly due to Negative and Positive Bias Temperature Instability (NBTI and PBTI) is a major reliability threat for VLSI circuits fabricated in nanometer technology nodes. These phenomena can shift the threshold voltage of transistor over time, increase their delays and cause timing failure and ultimately reduction of lifetime of VLSI chips. As much as FPGAs benefit from the most scaled and advanced technologies, they become susceptible to transistor aging. In this paper, we… CONTINUE READING
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